savantic semiconductor product specification silicon pnp power transistors 2sa1306 2SA1306A 2sa1306b d escription with to-220fa package complement to type 2sc3298,2sc3298a,2sc3298b applications power amplifier applications driver stage amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sa1306 -160 2SA1306A -180 v cbo collector- base voltage 2sa1306b open emitter -200 v 2sa1306 -160 2SA1306A -180 v ceo collector- emitter voltage 2sa1306b open base -200 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a i b base current -0.15 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2sa1306 2SA1306A 2sa1306b characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sa1306 -160 2SA1306A -180 v (br)ceo collector-emitter breakdown voltage 2sa1306b i c =10ma , i b =0 -200 v v cesat collector-emitter saturation voltage i c =-0.5a, i b =-50ma -1.5 v v be base-emitter voltage i c =-0.5a ,v ce =-5v -1.0 v i cbo collector cut-off current v cb =-160v, i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe dc current gain i c =-0.1a ; v ce =-5v 70 240 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 30 pf f t transition frequency i c =-0.1a ; v ce =-10v 100 mhz h fe classifications o y 70-140 120-240 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2sa1306 2SA1306A 2sa1306b package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm) downloaded from: http:///
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